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IEEE Electron Device Letters
The authors have demonstrated the operation of GaN based light emitting diodes grown on Si(111) by molecular beam epitaxy. Electron injection is achieved through the n type Si substrate and electroluminescence peaks between 500-550 in the current injection range of 20-65 A/cm2 at 5-7.5 volts.
L.Å. Ragnarsson, S. Guha, et al.
IEEE Electron Device Letters
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