M.M. Frank, V.K. Paruchuri, et al.
VLSI-TSA 2005
The authors have demonstrated the operation of GaN based light emitting diodes grown on Si(111) by molecular beam epitaxy. Electron injection is achieved through the n type Si substrate and electroluminescence peaks between 500-550 in the current injection range of 20-65 A/cm2 at 5-7.5 volts.
M.M. Frank, V.K. Paruchuri, et al.
VLSI-TSA 2005
D.J. Kim, D.Y. Ryu, et al.
Journal of Applied Physics
D. Kazazis, A. Zaslavsky, et al.
Semiconductor Science and Technology
J. Appenzeller, J. Knoch, et al.
IEDM 2006