A.W. Kleinsasser, T.N. Jackson, et al.
Applied Physics Letters
Summary form only given. Reported are p-i-n photodetectors using GaAs with As precipitates (GaAs) that detect 1.3-μm light with reasonable efficiency. Since high-performance GaAs electronic circuits can be epitaxially grown on GaAs, this work may open the way for an all-GaAs 1.3-μm optical receiver chip. In the GaAs p-i-n devices, the i layer was a 1-μm-thick layer of GaAs. MSM structures with GaAs as the optically active material were also made.
A.W. Kleinsasser, T.N. Jackson, et al.
Applied Physics Letters
M.D. Pashley, K.W. Haberern, et al.
Physical Review Letters
S. Tiwari, G.D. Pettit, et al.
IEDM 1992
J. Woodall, H.J. Hovel
Applied Physics Letters