Conference paper
Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
The electric-field-dependent conductivity was studied on Ge1-xAux alloys near the metal-insulator transition. We have been able to rule out trivial heating effects, and our experiments are described in terms of electron heating. Our findings are in good agreement with theories which discuss electron-phonon relaxation time effects. © 1987 The American Physical Society.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
P.C. Pattnaik, D.M. Newns
Physical Review B
R.M. Macfarlane, R.L. Cone
Physical Review B - CMMP
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Langmuir