J. Ullmann, A.J. Kellock, et al.
Thin Solid Films
In this paper, the effects of irradiation of Ge-doped FHD silica with 2 MeV Ar+ ions were optically characterized using an m-line technique based on grating couplers. An increase of refractive index as high as 1.2×10-2 was obtained, larger than the values normally reported for UV or electron-beam irradiation of the same material (typically of ≈10-3). Thermal annealing has been carried out and an activation energy of 0.36 eV for the recovery of the refractive index has been estimated, suggesting that a bond rearrangement mechanism could be responsible for the change in refractive index. © 2003 Elsevier Science B.V. All rights reserved.
J. Ullmann, A.J. Kellock, et al.
Thin Solid Films
R. Hauert, A. Glisenti, et al.
Thin Solid Films
D.K. Sood, J.E.E. Baglin
Nuclear Inst. and Methods in Physics Research, B
E.D. Tober, R.F. Marks, et al.
Applied Physics Letters