Chiara Marchiori, Mario El Kazzi, et al.
ECS Transactions
Lateral N+/n/N+ InGaAs-on-insulator structures are successfully fabricated by direct wafer bonding and selective regrowth. Electrical characterizations are performed for varying n-layer thickness from fully-depleted films up to the limit of partial depletion. Measurements under externally applied uniaxial tensile strain show an improved drive current.
Chiara Marchiori, Mario El Kazzi, et al.
ECS Transactions
Emanuele Uccelli, Nicolas Daix, et al.
ITNG 2014
Lukas Czornomaz, N. Daix, et al.
IEDM 2012
Clarissa Convertino, C. B. Zota, et al.
Japanese Journal of Applied Physics