Etch pits and dislocations in {100} GaAs wafers

J. Angilello; R.M. Potemski; G.R. Woolhouse

doi:10.1063/1.321833

Journal of Applied Physics

Paper

02 Sep 2008

Etch pits and dislocations in {100} GaAs wafers

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Abstract

The reliability of molten KOH for revealing dislocations intersecting {100} faces of GaAs has been tested using transmission x-ray topography. It is found to be a "faithful" etch.

Paper

The formation of Ga_1-xAl_xAs layers on the surface of GaAs during continual dissolution into Ga-Al-As solutions

M.B. Small, R. Ghez, et al.

Applied Physics Letters

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Epitaxial Growth of GaAs with (C₂H₅)₂GaCl and AsH₃ in a Hotwall Reactor

T.F. Kuech, M.A. Tischler, et al.

JES

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Two-dimensional lattice simulation by magnetic bubbles

G.R. Woolhouse, P. Chaujdhari

Philosophical Magazine

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Contact angles between (GaAl)As solid and solutions

R.M. Potemski, M.B. Small

Journal of Crystal Growth

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Abstract

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