F.J. Himpsel, D.E. Eastman, et al.
Physical Review B
It is shown that LiF(100) films with the electronic properties of cleaved bulk LiF crystals can be grown epitaxially on Ge(100). These include an exceptionally large, negative electron affinity of -2.7 eV, which leads to intense photoemission at zero kinetic energy. The valence band offset ranges from 7.3-7.6 eV.
F.J. Himpsel, D.E. Eastman, et al.
Physical Review B
J.F. Morar, F.J. Himpsel, et al.
Physical Review B
T.-C. Chiang, R. Ludeke, et al.
Physical Review B
Th. Fauster, F.J. Himpsel, et al.
Review of Scientific Instruments