F.J. Himpsel, D.E. Eastman
Physical Review B
It is shown that LiF(100) films with the electronic properties of cleaved bulk LiF crystals can be grown epitaxially on Ge(100). These include an exceptionally large, negative electron affinity of -2.7 eV, which leads to intense photoemission at zero kinetic energy. The valence band offset ranges from 7.3-7.6 eV.
F.J. Himpsel, D.E. Eastman
Physical Review B
G. Hollinger, F.J. Himpsel
Applied Physics Letters
D.A. Lapiano-Smith, F.R. McFeely
Thin Solid Films
F.J. Himpsel, P.M. Marcus, et al.
Physical Review B