R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics
The epitaxial growth of Pt on basal-plane sapphire, i.e. sapphire (0001), by molecular beam epitaxy is described. Growth is monitored in situ using X-ray photoelectron diffraction (XPD), reflection high energy electron diffraction (RHEED) and low energy electron diffraction (LEED). The structural perfection of thin ( < 250 Å) films of Pt is studied using X-ray diffraction and electron microscopy. We find that Pt nucleates on the sapphire surface at 600°C as islands which are rotationally twinned about the Pt[111] axis. The epitaxial relationship is: Pt[111]{norm of matrix}Al2O3[0001] and Pt(110){norm of matrix}Al2O3 (101̄0). Island coalescence occurs at a thickness of $ ̃15 Å and X-ray diffraction shows that the Pt films have a high structural perfection. Such films are nearly ideal as seed films for a variety of epitaxial magnetic multilayers and alloys. © 1993.
R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics
J.C. Marinace
JES
Oliver Schilter, Alain Vaucher, et al.
Digital Discovery
Sharee J. McNab, Richard J. Blaikie
Materials Research Society Symposium - Proceedings