J.C. Tsang, F.H. Dacol, et al.
Applied Physics Letters
Paper
Epitaxial base transistors with ultrahigh vacuum chemical vapor deposition (uhv/cvd) epitaxy: Enhanced profile control for greater flexibility in device design
Abstract
Small-geometry silicon-bipolar transistors with -8-k/D base sheet resistances and >100-nm base widths have been fabricated using an ultrahigh vacuum chemical vapor deposition (UHV/CVD) 550 °C epitaxy process. The results show that UHV/CVD low-tempera-ture epitaxy can provide thin highly doped base profiles. This process allows a higher degree of decoupling between base thickness and sheet resistance than is typically obtained with an ion-implanted process. © 1989 IEEE
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