R.J. Hamers, Ph. Avouris, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
We demonstrate the feasibility of electron-induced chemical vapor deposition of thin films using low-energy electrons to induce reactions in adsorbed molecular layers. Amorphous hydrogenated silicon, silicon dioxide, silicon oxynitride, and silicon nitride films have been deposited by establishing adsorbed Si2H6, Si2H 6-O2, Si2H6-NO, and Si 2H6-NH3 layers at 100 K and using 300-1000 eV electron beams.
R.J. Hamers, Ph. Avouris, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
T. Mueller, F. Xia, et al.
Physical Review B - CMMP
J.A. Yarmoff, A. Taleb-Ibrahimi, et al.
Physical Review Letters
S.J. Wind, J. Appenzeller, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures