Reduced Cu interface diffusion by CoWP surface coating
C.-K. Hu, L. Gignac, et al.
Microelectronic Engineering
Physical phenomena underlying failure due to electromigration and stress-induced voiding in fine Al and Al-alloy thin-film conducting lines are examined in the context of accelerated testing methods and structures. Aspects examined include effects due to line isolation (the absence of reservoirs at conductor ends), solute and precipitate phenomena, conductor critical (Blech) length, microstructure, film deposition conditions, and thermal processing subsequent to film deposition. Emphasis is on the isolated, submicron-wide, Al(Cu)-based thin-film interconnection lines of IBM VLSI logic and memory chips.
C.-K. Hu, L. Gignac, et al.
Microelectronic Engineering
Thomas R. Puzak, A. Hartstein, et al.
CF 2007
Hans Becker, Frank Schmidt, et al.
Photomask and Next-Generation Lithography Mask Technology 2004
Liat Ein-Dor, Y. Goldschmidt, et al.
IBM J. Res. Dev