Donald Samuels, Ian Stobert
SPIE Photomask Technology + EUV Lithography 2007
Physical phenomena underlying failure due to electromigration and stress-induced voiding in fine Al and Al-alloy thin-film conducting lines are examined in the context of accelerated testing methods and structures. Aspects examined include effects due to line isolation (the absence of reservoirs at conductor ends), solute and precipitate phenomena, conductor critical (Blech) length, microstructure, film deposition conditions, and thermal processing subsequent to film deposition. Emphasis is on the isolated, submicron-wide, Al(Cu)-based thin-film interconnection lines of IBM VLSI logic and memory chips.
Donald Samuels, Ian Stobert
SPIE Photomask Technology + EUV Lithography 2007
Chidanand Apté, Fred Damerau, et al.
ACM Transactions on Information Systems (TOIS)
Liqun Chen, Matthias Enzmann, et al.
FC 2005
Erich P. Stuntebeck, John S. Davis II, et al.
HotMobile 2008