Kenneth R. Carter, Robert D. Miller, et al.
Macromolecules
Paper
Electric field effect on superconducting YBa2Cu3O7-δ films
Abstract
MISFET-type structures have been developed that allow the application of electric fields larger than 4 × 106 V/cm into 100 Å thick, superconducting YBa2Cu3O7-δ channel layers. With these structures, t he carrier density and the electrical resistivity of YBa2Cu3O7-δ can be modified in the percent range by gate voltages of 50 V. © 1991.
Related
F.J. Himpsel, T.A. Jung, et al.
Surface Review and Letters
Conference paper
Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Xikun Hu, Wenlin Liu, et al.
IEEE J-STARS