Applied Physics Letters

Paper

30 Nov 2004

Efficient injection electroluminescence in znte by avalanche breakdown

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Abstract

No abstract available.

Paper

Annealing characteristics of n-type dopants in ion-implanted silicon

B.L. Crowder, F.F. Morehead Jr.

UNKNOWN

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Injection mechanism and recombination kinetics in electroluminescent cdte diodes

F.F. Morehead

Journal of Applied Physics

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Boron atom distributions in ion-implanted silicon by the (n,⁴He) nuclear reaction

J.F. Ziegler, B.L. Crowder, et al.

Applied Physics Letters

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Comment on “The diffusion of antimony in heavily doped and (sic) n- and p-type silicon” [J. Mater. Res. 1, 705 (1986)]

F.F. Morehead

Journal of Materials Research

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