R. Ghez, M.B. Small
JES
We have investigated the role of surface oxygen on the rapid thermal nitridation of Si(001) by NH3 using medium energy ion scattering. For short times, typical of rapid thermal processing, monolayer quantities of oxygen are sufficient to reduce nitridation. The oxide remains on the surfaces after nitridation, which may adversely influence subsequent nitride chemical vapor deposition. © 1996 American Vacuum Society.
R. Ghez, M.B. Small
JES
Thomas E. Karis, C. Mark Seymour, et al.
Rheologica Acta
Lawrence Suchow, Norman R. Stemple
JES
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000