M.A. Lutz, R.M. Feenstra, et al.
Surface Science
It has been known that silicon atoms can diffuse out through a gold film and accumulate on the top surface at low temperatures. To investigate the effect of this phenomenon on the silicide formation kinetics, a gold layer was deposited between a platinum layer and a silicon layer. After annealing, the progress of silicide formation was probed with Rutherford backscattering spectrometry. It was found that the PtSi formation rate is greatly enhanced by a gold film while the Pt2Si formation rate shows little changes. These are explained in terms of different dominant diffusing species during the formation of silicides. © 1987, American Vacuum Society. All rights reserved.
M.A. Lutz, R.M. Feenstra, et al.
Surface Science
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Small
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Physica A: Statistical Mechanics and its Applications
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Journal of Organometallic Chemistry