Revanth Kodoru, Atanu Saha, et al.
arXiv
It has been known that silicon atoms can diffuse out through a gold film and accumulate on the top surface at low temperatures. To investigate the effect of this phenomenon on the silicide formation kinetics, a gold layer was deposited between a platinum layer and a silicon layer. After annealing, the progress of silicide formation was probed with Rutherford backscattering spectrometry. It was found that the PtSi formation rate is greatly enhanced by a gold film while the Pt2Si formation rate shows little changes. These are explained in terms of different dominant diffusing species during the formation of silicides. © 1987, American Vacuum Society. All rights reserved.
Revanth Kodoru, Atanu Saha, et al.
arXiv
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
U. Wieser, U. Kunze, et al.
Physica E: Low-Dimensional Systems and Nanostructures
I. Morgenstern, K.A. Müller, et al.
Physica B: Physics of Condensed Matter