J. Tersoff, D.E. Jesson, et al.
Science
The effect of drain voltage scaling on the turn-on behavior of carbon nanotube (CNT) transistors was studied. The decrease in oxide thickness was found to improve the turn-on behavior. Scaling was employed to avoid an exponential increase in off-current with drain voltage, arising due to the schottky barriers modulation at both the source and drain contact.
J. Tersoff, D.E. Jesson, et al.
Science
François Léonard, J. Tersoff
Physical Review Letters
S. Heinze, J. Tersoff, et al.
Applied Physics Letters
B.J. Kim, J. Tersoff, et al.
Science