Graphene technology for RF and THz applications
Alberto Valdes-Garcia, Fengnian Xia, et al.
IMS 2013
A new double-contact geometry for graphene devices is studied and compared to traditional top contacts. Double contacts consist of metal below and above the graphene in a sandwich-type configuration. Four-probe structures were tested for both single-layer [chemical-vapor-deposition (CVD)-grown] graphene and bilayer (mechanically exfoliated) graphene, with both showing a decrease in contact resistance of at least 40% and an increase in transconductance greater than 20%. CVD-grown single-layer graphene transistors exhibited contact resistance as low as 260 Ωμm, with an average of 320 Ωμm. This new geometry can help minimize the impact of contacts on graphene device performance. © 2011 IEEE.
Alberto Valdes-Garcia, Fengnian Xia, et al.
IMS 2013
Keith A. Jenkins, Damon B. Farmer, et al.
Applied Physics Letters
Shu-Jen Han, Dechao Guo, et al.
IEEE Electron Device Letters
Qing Cao, Shu-Jen Han, et al.
Nature Nanotechnology