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Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
The Gilat-Raubenheimer integration procedure has been generalized to the calculation of photoemission energy distributions arising from direct interband transitions. A detailed application to Pd successfully explains the main features of new photoemission data (d-band structure at 0.15, 1.2, 2.2 and 3.5 eV below the Fermi level), thus suggesting that nondirect transitions need not be invoked. © 1970.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
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