D.J. Wolford, G.D. Gilliland, et al.
Applied Physics Letters
We have directly measured the transport of heavy-hole excitons in a type-II GaAs/AlAs superlattice. Our results constitute the first direct confirmation of exciton localization in type-II structures and thermal activation to more mobile states. We have also developed a quantitative model to explain our transport and kinetics results, and have obtained the nonradiative interfacial defect density. © 1993 The American Physical Society.
D.J. Wolford, G.D. Gilliland, et al.
Applied Physics Letters
D.J. Wolford, J.A. Bradley, et al.
ICPS Physics of Semiconductors 1984
T.F. Kuech, E. Veuhoff, et al.
Gallium Arsenide and Related Compounds 1984
G. Northrop, J.F. Morar, et al.
Applied Physics Letters