W.A. Orr Arienzo, R. Glang, et al.
Journal of Applied Physics
Paper
Diffusion of zinc in gallium arsenide: A new model
Abstract
Experimental results on the diffusion of Zn in GaAs which could not be satisfactorily explained in terms of a Frank-Turnbull mechanism involving vacancies can be understood with a "kick-out model" in which the equilibrium between interstitial and substitutional Zn is established via gallium interstitials.
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