Calvin R. King Jr., Deepak Sekar, et al.
ECTC 2008
Paper
Device parameter optimization for reduced short channel effects in retrograde doping MOSFET
Abstract
A simple technique to optimize the device parameters of the retrograde channel doping MOSFET to minimize short channel effects for a constant threshold voltage is presented in this work. The results indicate that the highest possible substrate doping does not necessarily result in minimum short channel effects. © 1996 IEEE.
Related
James R. Pfiester, John D. Shott, et al.
IEEE T-ED
Deepak C. Sekar, Bing Dang, et al.
IEEE Electron Device Letters
James R. Pfiester, John D. Shott, et al.
IEEE Journal of Solid-State Circuits