A. Nagarajan, S. Mukherjee, et al.
Journal of Applied Mechanics, Transactions ASME
A procedure has been developed for applying the surface photovoltage technique to the measurement of the width of the oxygen precipitate-free zone present at the surface of a thermally processed, Czochralski-grown silicon wafer. This procedure was developed through the use of a numerical simulation program which models the experimental determination of an effective diffusion lenght, L0, from surface photovoltage measurements on silicon wafers. The program predicts L0 for a given precipitate-free zone diffusion length and thickness and bulk diffusion length. Results of the simulations show that for bulk diffusion lengths of 2 μ or less and a precipitate-free zone diffusion length greater than the thickness of the zone, W, the W ≡ 2.5L0. Experimental results are presented which support the numerical findings. © 1983.
A. Nagarajan, S. Mukherjee, et al.
Journal of Applied Mechanics, Transactions ASME
L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993
Shaoning Yao, Wei-Tsu Tseng, et al.
ADMETA 2011
Eloisa Bentivegna
Big Data 2022