Conference paper
Modeling polarization for Hyper-NA lithography tools and masks
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
We demonstrate that a large fraction of the available data relating the critical current density J, of superconducting Nb-A1Ox-Nb tunnel junctions to oxidation parameters can be accounted for by a single, nearly universal dependence. For fixed oxidation temperature, J, does not depend independently on oxygen partial pressure and oxidation time, but only on their product. There are two distinct regimes in this dependence, corresponding to high and low Jc. © 1995 IEEE
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
R. Ghez, M.B. Small
JES
T.N. Morgan
Semiconductor Science and Technology
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics