V.P. Kesan, E. Bassous, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Paper
Demonstration of a p-Channel BICFET in the GexSi1-x/Si System
Abstract
The first operational bipolar inversion-channel field-effect transistors (BICFET’s) based on the GexSi1-x/Si system have been successfully demonstrated. The 300 K current gain of β = 365 at a current density of Jc= 2.5 x 104A/cm2 is believed to be the highest value reported for any BICFET to date. The use of a double-heterojunction inversion channel eliminates the collector offset voltage. The present devices are limited by the channel resistance, so that performance improvements are expected for laterally scaled-down devices. © 1989 IEEE
Related
Conference paper
Novel capacitor-less high density low power vertical memory
S. Tiwari, H.I. Hanafi, et al.
DRC 1994
J.C. Tsang, Subramanian S. Iyer, et al.
Physical Review B
P.R. Pukite, Subramanian S. Iyer, et al.
Applied Physics Letters