H. Barratte, G. Scilla, et al.
ECS Meeting 1989
Evidence is presented to show that the degradation of near-band-gap photoluminescence emission in GaAs with time of exposure to low power, cw laser excitation can be attributed to a surface mechanism that is independent of surface oxidation and may involve an interaction between crystal point defects and the photogenerated electron-hole plasma near the surface.
H. Barratte, G. Scilla, et al.
ECS Meeting 1989
G. Shahidi, C. Blair, et al.
VLSI Technology 1993
C. Lanza, H.J. Hovel
IEEE T-ED
H. Baratte, A.J. Fleischman, et al.
JES