Conference paper
Inversion channel mobility in high-κ high performance MOSFETs
Z. Ren, M.V. Fischetti, et al.
IEDM 2003
Destructive breakdown in silicon dioxide is shown to be strongly correlated to the oxide degradation caused by hot-electron-induced defect production and charge trapping near the interfaces of the films. Two well-defined transitions in the charge-to-breakdown data as a function of field and oxide thickness are shown to coincide with the onset of trap creation and impact ionization by electrons with energies exceeding 2 and 9 eV, respectively.
Z. Ren, M.V. Fischetti, et al.
IEDM 2003
R. Ludeke, V. Narayanan, et al.
Applied Physics Letters
Z. Luo, T.P. Ma, et al.
International Symposium on VLSI Technology, Systems, and Applications, Proceedings
A.C. Callegari, P. Jamison, et al.
IEDM 2004