Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT
In situ resistivity measurements have been used to determine the kinetics of crystal growth of co-evaporated NiSix films. Samples with various heat treatments have been examined with X-ray diffaction to determine the phases growing. It is found that all the films contain crystallites as deposited and that NiSi2 or Ni2Si grow in most of them. The variations in activation energy and the "mode of transformation" with composition are explained. © 1990.
Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
Ranulfo Allen, John Baglin, et al.
J. Photopolym. Sci. Tech.
R. Ghez, J.S. Lew
Journal of Crystal Growth