Ruqiang Bao, Brian Greene, et al.
IEDM 2015
We show, for the first time, a robust high aspect ratio (∼4:1) confined PCM cell which utilizes a dense and highly reliable nano-crystalline-as-deposited ALD phase change material. The 33nm diameter pore structures were filled utilizing an in-situ metal nitride liner plus nano-crystalline ALD Ge-Sb-Te material. The tuned process for depositing and integrating the phase change material brings the programming endurance to beyond 2.8 × 1011. We demonstrate a fast programming speed of 80ns with 10x switching and, with the aid of simulation, show a path for these elements to create a high density PCM cell suitable for Storage Class Memory.
Ruqiang Bao, Brian Greene, et al.
IEDM 2015
Robert L. Bruce, Gloria Fraczak, et al.
SPIE Advanced Lithography 2017
Sufi Zafar, Christopher P. D’Emic, et al.
ACS Nano
Levente J. Klein, Muralidhar Ramachandran, et al.
ICIOT 2018