Inherent stochasticity in phase-change memory devices
Manuel Le Gallo, Tomas Tuma, et al.
ESSDERC 2016
In spite of the prominent role played by phase change materials in information technology, a detailed understanding of the central property of such materials, namely the phase change mechanism, is still lacking mostly because of difficulties associated with experimental measurements. Here, we measure the crystal growth velocity of a phase change material at both the nanometre length and the nanosecond timescale using phase-change memory cells. The material is studied in the technologically relevant melt-quenched phase and directly in the environment in which the phase change material is going to be used in the application. We present a consistent description of the temperature dependence of the crystal growth velocity in the glass and the super-cooled liquid up to the melting temperature. © 2014 Macmillan Publishers Limited. All rights reserved.
Manuel Le Gallo, Tomas Tuma, et al.
ESSDERC 2016
Daniel Krebs, Tobias Bachmann, et al.
New Journal of Physics
Riduan Khaddam-Aljameh, Milos Stanisavljevic, et al.
IEEE JSSC
S. R. Nandakumar, Manuel Le Gallo, et al.
Journal of Applied Physics