Conference paper
Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Transport measurements are presented of a small island of electrons confined within a semiconductor heterostructure. Low bias measurements are used to infer the addition spectrum of the island as a function of gate voltage and magnetic field. Nonlinear measurements are used to explore the excitation spectrum of the island. These measurements are interpreted in terms of a model that treats the Coulomb interactions between electrons in a self-consistent manner. © 1993.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Zelek S. Herman, Robert F. Kirchner, et al.
Inorganic Chemistry
Sung Ho Kim, Oun-Ho Park, et al.
Small
J.V. Harzer, B. Hillebrands, et al.
Journal of Magnetism and Magnetic Materials