E.A. Stach, R. Hull, et al.
Journal of Applied Physics
We describe a technique for the homoepitaxial growth of epitaxial, faceted Si islands on Si(001), consisting of predeposition of Ga surfactant followed by ultrahigh vacuum chemical vapor deposition (CVD) of Si. Ga-mediated Si CVD leads to the formation of Si islands exhibiting {113} and {102} facets. Surfactant-mediated CVD is shown to provide a new degree of freedom for the production of nanoscale structures without lithography. © 2008 American Institute of Physics.
E.A. Stach, R. Hull, et al.
Journal of Applied Physics
M.C. Reuter, R.M. Tromp
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
F.M. Ross, R.M. Tromp, et al.
Science
R.M. Tromp, F.M. Ross, et al.
Physical Review Letters