J. Tersoff, D.E. Jesson, et al.
Science
The congruent evaporation temperature Tc is a fundamental surface characteristic of GaAs and similar compounds. Above Tc the rate of As evaporation exceeds that of Ga during Langmuir (free) evaporation into a vacuum. However, during molecular beam epitaxy (MBE) there is generally an external As flux F incident on the surface. Here we show that this flux directly controls Tc. We introduce a sensitive approach to measure Tc based on Ga droplet stability, and determine the dependence of Tc on F. This dependence is explained by a simple model for evaporation in the presence of external flux. The capability of manipulating Tc via changing F offers a means of controlling congruent evaporation with relevance to MBE, surface preparation methods, and droplet epitaxy. © 2010 American Institute of Physics.
J. Tersoff, D.E. Jesson, et al.
Science
Z.Y. Zhou, C.X. Zheng, et al.
Physical Review Letters
W.X. Tang, C.X. Zheng, et al.
IBM J. Res. Dev
Z.Y. Zhou, C.X. Zheng, et al.
Physical Review Letters