Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT
The conduction behavior of ideal relaxation semiconductors is studied in the general case with trapping included. The investigation of the range of validity of the relaxation concept leads to a more restricted defining condition for the relaxation regime. With increasing deviations from the ideal relaxation regime, the conduction approaches gradually the well-known behavior of conventional (lifetime) semiconductors. In particular, it is shown that the trapping conditions required for "recombinative space-charge injection" are incompatible with thermodynamic steady-state requirements. © 1975 The American Physical Society.
Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT
Lawrence Suchow, Norman R. Stemple
JES
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997
O.F. Schirmer, K.W. Blazey, et al.
Physical Review B