Conference paper
New polysilicon disposable sidewall process for sub-50 nm CMOS
K.L. Lee, D. Boyd, et al.
ESSDERC 2001
Volterra edge dislocations were introduced in an amorphous Lennard-Jones model. By application of suitable boundary conditions, equivalent to a shear stress, a recognizable step with a shape of a double-headed asymptote was formed on the other side of the amorphous solid. This suggests that atomic transport via dislocation motion can occur and could be the mechanism of shear-band formation in real amorphous materials. © 1983 The American Physical Society.
K.L. Lee, D. Boyd, et al.
ESSDERC 2001
R. Gross, P. Chaudhari, et al.
Physica C: Superconductivity and its applications
P. Chaudhari, A.N. Broers, et al.
Physical Review Letters
R. Gross, P. Chaudhari, et al.
Physical Review B