Computation of complex band structures in bulk and confined structures

Complex bands are computed for Si using a sp3d5s&z.ast; atomistic tight binding Hamiltonian with spin orbit splitting for both bulk and confined structures. Representative band structures are shown. The bulk Si calculations imply that band-to-band tunneling current should be less in the [1 0 0] direction compared to either [1 1 0] or [1 1 1] directions, which is qualitatively consistent with experiment. ©2009 IEEE.