M. Stoffel, A. Rastelli, et al.
Physical Review B - CMMP
The degree of Si alloying in vertically aligned self-assembled Ge islands increases with the number of stacked layers. We find that the Si-Ge interdiffusion coefficient increases by more than two orders of magnitude for stacked hut clusters. Furthermore, we determine the composition profiles through the center of dome-shaped islands, capped with Si. These profiles exhibit a plateau near the base and a Ge enrichment near the apex of the islands. In this case, too, the upper dome island experiences a state of increased alloying with Si. © 2002 American Institute of Physics.
M. Stoffel, A. Rastelli, et al.
Physical Review B - CMMP
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MRS Proceedings 2002
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Surface Science
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Solid-State Electronics