Ravi Bonam, R. Muthinti, et al.
SPIE Advanced Lithography 2017
Co/Cu composite interconnect systems were studied. Since wide Cu lines require a diffusion barrier which is simultaneously applied also to fine Co lines to reduce Co volume fraction, through-Cobalt Self-Formed-Barrier (tCoSFB) was employed to thin down TaN barrier to <1 nm which works as an adhesion layer for Co lines. Line R of fine Co lines was reduced by 30% successfully. The Co/tCoSFB-Cu composite interconnect system is promising to achieve low line R for both fine and wide lines simultaneously in 7nm BEOL and beyond.
Ravi Bonam, R. Muthinti, et al.
SPIE Advanced Lithography 2017
Takeshi Nogami, C. Penny, et al.
IEDM 2012
A. Simon, Tibor Bolom, et al.
IRPS 2013
Takeshi Nogami, Chih-Chao Yang, et al.
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