Dechao Guo, G. Karve, et al.
VLSI Technology 2016
A compact waveguide-integrated Germanium-on-insulator (GOI) photodetector with 10 ± 2fF capacitance and operating at 40Gbps is demonstrated. Monolithic integration of thin single-crystalline Ge into frontend CMOS stack was achieved by rapid melt growth during source-drain implant activation anneal. ©2010 Optical Society of America.
Dechao Guo, G. Karve, et al.
VLSI Technology 2016
Jun Rong Ong, Marcelo Davanco, et al.
CLEO-SI 2012
Wenjuan Zhu, Tony Low, et al.
Nature Communications
Solomon Assefa, Fengnian Xia, et al.
OFC 2010