Conference paper
Compression for data archiving and backup revisited
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
Chemically induced grain-boundary migration is demonstrated in polycrystalline silicon films. Growth of anomalously large grains, along with dopant depletion, is observed in P-doped polycrystalline Si films annealed at 700°C in the presence of a neighboring TiSi2 film. We propose a novel driving mechanism for migration here, an electrostatic force on the interface due to inhomogeneous dopant depletion. © 1988.
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
C.M. Brown, L. Cristofolini, et al.
Chemistry of Materials
Ranulfo Allen, John Baglin, et al.
J. Photopolym. Sci. Tech.
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IEDM 1998