J. Tersoff
Applied Surface Science
By using a field-effect transistor configuration, we have demonstrated that it is possible to dope electrons or holes into an initially underdoped YBa2Cu3O7-x film at room temperature. The results of systematic measurements of the dual-type transconductance indicate comparable field-effect mobilities for electrons and holes. We propose a model based on band bending and localized electronic states within the band gap of the Mort insulator to explain the dual-type charge transport.
J. Tersoff
Applied Surface Science
R. Ghez, M.B. Small
JES
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
P. Alnot, D.J. Auerbach, et al.
Surface Science