Sung Ho Kim, Oun-Ho Park, et al.
Small
We present a physics-based model for nonlinear analysis of InGaAs/InP modified uni-traveling carrier (MUTC) photodiodes. At low frequencies (<3GHz), the Franz-Keldysh effect has been identified as the primary nonlinear mechanism in these MUTC photodiodes. The output third-order intercept point (OIP3) is used as a figure of merit for characterizing the nonlinear intermodulation distortion. The OIP3 behavior of the photodiode simulated using this model agrees well with measurements. © 2011 IEEE.
Sung Ho Kim, Oun-Ho Park, et al.
Small
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
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SPIE Advanced Lithography 2010