Characterization of epitaxial (Ca,Ba)F2 films on Si(111) substrates

M. Wittmer; D.A. Smith; Armin Segmüller; H. Zogg; H. Melchior

doi:10.1063/1.97529

Applied Physics Letters

Paper

01 Dec 1986

Characterization of epitaxial (Ca,Ba)F₂ films on Si(111) substrates

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Abstract

We have investigated epitaxial BaF2/CaF2 bilayers on Si(111) with ion channeling, grazing-incidence x-ray diffraction, and transmission electron microscopy. The BaF2 layer, which was grown on a thin intermediate CaF2 layer, showed a channeling minimum yield of 8% and a residual strain of 0.2%. Regions of BaF2 with a mosaic spread in orientation were observed but otherwise the epitaxial quality of the fluoride bilayer was found to be very good.

Conference paper

INTERACTION BETWEEN Ti AND SiO//2.

C.-Y. Ting, M. Wittmer, et al.

VLSI Science and Technology 1983

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Comment on "Misfit stress in InGaAs/InP heteroepitaxial structures grown by vapor-phase epitaxy" (Journal of Applied Physics (1985) 57 (249))

I.C. Noyan, Armin Segmüller

Journal of Applied Physics

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Electron microscope studies of the structure and propagation of the Pd₂Si/(111)Si interface

D. Cherns, D.A. Smith, et al.

Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties

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Armin Segmüller, J. Angilelo, et al.

Journal of Applied Physics

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Abstract

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