C.C. Chi, John Clarke
Physical Review B
We have measured the dependence of the free-carrier lifetime on O + ion-implantation dose in silicon-on-sapphire. At low implant doses, the carrier trapping rate increased linearly with the trap density introduced by ion implantation. At doses above 3×1014 cm -2 the measured carrier lifetime reached a limit of 600 fs.
C.C. Chi, John Clarke
Physical Review B
C.C. Tsuei, C.C. Chi, et al.
Materials Chemistry and Physics
C.L. Schow, L. Schares, et al.
IEEE Photonics Technology Letters
C. Narayan, S. Purushothaman, et al.
MCMC 1994