M. Hargrove, S.W. Crowder, et al.
IEDM 1998
Models of Schottky barrier formation based on intrinsic interface or surface states suggest Fermi-level pinning at or near some effective mid-gap energy EB. This energy can be calculated directly from the bulk semiconductor band structure. Details of the calculation of EB and hence of Schottky barrier heights, as well as heterojunction band line-ups, are given here. © 1986.
M. Hargrove, S.W. Crowder, et al.
IEDM 1998
J.R. Thompson, Yang Ren Sun, et al.
Physica A: Statistical Mechanics and its Applications
Peter J. Price
Surface Science
Kigook Song, Robert D. Miller, et al.
Macromolecules