Alessandro Fumarola, Yusuf Leblebici, et al.
NVMTS 2019
We report on material improvements to non-filamentary RRAM devices based on Pr0.7Ca0.3MnO3 by introducing an MoOx buffer layer together with a reactive Al electrode, and on device measurements designed to help gauge the performance of these devices as bidirectional analog synapses for on-chip acceleration of the backpropagation algorithm. Previous Al/PCMO devices exhibited degraded LRS retention due to the low activation energy for oxidation of the Al electrode, and Mo/PCMO devices showed low conductance contrast. To control the redox reaction at the metal/PCMO interface, we introduce a 4-nm interfacial layer of conducting MoOx as an oxygen buffer layer. Due to the controlled redox reaction within this Al/Mo/PCMO device, we observed improvements in both retention and conductance on/off ratio. We confirm bidirectional analog synapse characteristics and measure 'jump-tables' suitable for large scale neural network simulations that attempt to capture complex and stochastic device behavior [see companion paper]. Finally, switching energy measurements are shown, illustrating a path for future device research toward smaller devices, shorter pulses and lower programming voltages.
Alessandro Fumarola, Yusuf Leblebici, et al.
NVMTS 2019
Pritish Narayanan, Lucas L. Sanches, et al.
ISCAS 2017
Geoffrey W. Burr, Pritish Narayanan, et al.
IEDM 2015
Alessandro Fumarola, Pritish Narayanan, et al.
ICRC 2016