Conference paper
Structure of the silicon-oxide interface
Yuhai Tu, J. Tersoff
Thin Solid Films
Band-edge discontinuities are calculated for tellurium-based II-VI heterojunctions. Contrary to the widely accepted common-anion rule, large valence-band discontinuities are found in most cases, including HgTe-CdTe. The common-anion rule is examined and predicted to fail, not only here, but for all lattice-matched II-VI and III-V heterojunctions. An experiment is proposed to test these predictions. © 1986 The American Physical Society.
Yuhai Tu, J. Tersoff
Thin Solid Films
J. Tersoff
Physical Review Letters
J. Tersoff
Physical Review Letters
S. Heinze, Neng-Ping Wang, et al.
Physical Review Letters