J.C. Tsang, M. Freitag, et al.
Nature Nanotechnology
We use scanning tunneling microscopy to investigate the reactivity of the dangling-bond states of Si(111)-(7×7). The reaction with NH3 is used as a prototype. We find that Si rest atoms are more reactive than Si adatoms and that center adatoms are more reactive than corner adatoms. Using atom-resolved electronic spectra, we probe the dangling-bond states on both clean and NH3-exposed surfaces. We find significant interactions and charge transfer between sites which strongly influence surface reactivity. © 1988 The American Physical Society.
J.C. Tsang, M. Freitag, et al.
Nature Nanotechnology
J. Rogozik, V. Dose, et al.
Physical Review B
Ph. Avouris, R. Martel, et al.
Physica B: Condensed Matter
J.E. Demuth, Ph. Avouris
Physical Review Letters