G. Hollinger, F.J. Himpsel, et al.
Solid State Communications
Ultraviolet photoelectron spectroscopy valence-band spectra measured at 51 eV for a series of thin oxide layers thermally grown on Si(l 11) and Si(100) surfaces show that anomalous bonding configurations exist in SiO2near the interface. A comparison with theoretical density-of-states calculations indicate that these configurations cannot be related to the existence of a strained SiO2layer with a distribution of Si-O Si bond angles different to what is found in bulk SiO2. The results support the existence of threefold-coordinated oxygen centres as described in the valence-alternation-pair model. © 1987 Taylor & Francis Group, LLC.
G. Hollinger, F.J. Himpsel, et al.
Solid State Communications
J.F. Morar, F.J. Himpsel, et al.
Physical Review Letters
B. Reihl, G. Hollinger, et al.
Journal of Magnetism and Magnetic Materials
G. Hollinger, J.F. Morar, et al.
Surface Science