Alan C. Warren, J. Woodall, et al.
Applied Physics Letters
Paper
An isothermal etchback-regrowth method for high-efficiency Ga1-xAlxAsGaAs solar cells
Abstract
High-efficiency pGa1-xAlxAs, nGaAs solar cells are made by isothermally soaking n-GaAs substrates in an undersaturated Zn-doped GaAlAs melt. This one-step growth procedure produces a graded band gap pGa1-xAlxAs layer 0.2-0.4 μm thick. Efficiencies of 18.5% AM0 and 21.9% AM1 have been measured. © 1990.
Related
Chu R. Wie, K. Xie, et al.
Proceedings of SPIE 1989
M.R. Melloch, J. Woodall, et al.
Materials Science and Engineering B
H.J. Hovel, J. Woodall
Applied Physics Letters