B.A. Scott, K.H. Nichols, et al.
Applied Physics Letters
High-efficiency p-Ga1-xAlxAs, p-GaAs, n-GaAs solar cells are made by isothermally soaking n-GaAs substrates in an undersaturated Zn-doped Ga-Al-As melt. This one-step growth procedure produces a graded band gap p-Ga1-xAlxAs layer 0.2-0.4 μm thick. Efficiencies of 18.5% AM0 and 21.9% AM1 have been measured.
B.A. Scott, K.H. Nichols, et al.
Applied Physics Letters
T.J. De Lyon, J. Woodall, et al.
Applied Physics Letters
Z. Hang, D. Yan, et al.
Physical Review B
J. Woodall, R.M. Potemski, et al.
Applied Physics Letters